053-4200 rev d 7-2006 new diode data sheet by darel bidwell product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery times ? soft recovery characteristics ? popular to-247 package or surface mount d 3 pak package ? low forward voltage ? low leakage current ? avalanche energy rated product applications ? anti-parallel diode -switchmode power supply -inverters ? free wheeling diode -motor controllers -converters -inverters ? snubber diode ? pfc ultrafast soft recovery rectifier diode 600v 15a apt15dq60b apt15dq60s APT15DQ60BG* apt15dq60sg* *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics symbol v f i rm c t unit volts a pf min typ max 2.0 2.4 2.5 1.56 25 500 25 characteristic / test conditionsforward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 15a i f = 30a i f = 15a, t j = 125c v r = 600v v r = 600v, t j = 125c characteristic / test conditionsmaximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 129c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) avalanche energy (1a, 40mh)operating and storagetemperature range lead temperature for 10 sec. symbol v r v rrm v rwm i f(av) i f(rms) i fsm e avl t j ,t stg t l unit volts amps mj c apt15dq60b_s(g) 600 1530 110 20 -55 to 175 300 1 - cathode 2 - anode back of case - cathode 1 2 t o - 2 4 7 1 2 d 3 pak 1 2 (s) (b) microsemi website - http://www.microsemi.com downloaded from: http:///
apt15dq60b_s(g) dynamic characteristics 053-4200 rev d 7-2006 microsemi reserves the right to change, without notice, the speci?cations and information contained herein. new diode data sheet by darel bidwell z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.401.20 1.00 0.80 0.60 0.40 0.20 0 0.5 single pulse 0.1 0.3 0.7 0.05 figure 1b, transient thermal impedance model peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: thermal and mechanical characteristics min typ max - 15 - 19 - 21 - 2 - - 105 - 250 - 5 - - 55 - 420 - 15 unit ns nc amps ns nc amps ns nc amps characteristicreverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 15a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 15a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 15a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c d = 0.9 characteristic / test conditionsjunction-to-case thermal resistance package weight maximum mounting torque symbol r jc w t torque min typ max 1.35 0.22 5.9 10 1.1 unit c/w oz g lb?in n?m 0.583 0.767 0.00222 0.0598 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext downloaded from: http:///
053-4200 rev d 7-2006 apt15dq60b_s(g) typical performance curves t j =125 c v r =400v 7.5a 15a 30a t j = -55 c t j = 25 c t j = 125 c t j = 175 c duty cycle = 0.5 t j =175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 3530 25 20 15 10 50 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forw ard current vs. casetemperature v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j =125 c v r =400v 30a 7.5a 15a 6050 40 30 20 10 0 700600 500 400 300 200 100 0 140120 100 8060 40 20 0 2520 15 10 50 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery ti me vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery curr ent vs. current rate of change 0 1 2 3 4 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 t j =125 c v r =400v 30a 15a 7.5a q rr t rr t rr q rr i rrm 1.21.0 0.8 0.6 0.4 0.2 0.0 9080 70 60 50 40 30 20 10 0 downloaded from: http:///
apt15dq60b_s(g) 053-4200 rev d 7-2006 apt6017lll 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 9. diode test circuit figure 10, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform to - 247 package outline d 3 pak package outline 15.85 (.624)16.05(.632) 18.70 (.736)19.10 (.752) 1.15 (.045)1.45 (.057) 5.45 (.215) bsc (2 plcs.) 4.90 (.193)5.10 (.201) 1.45 (.057) 1.60 (.063) 2.70 (.106)2.90 (.114) 0.40 (.016)0.65 (.026) dimensions in millimeters (inches) heat sink (cathode) and leads are plated 2.40 (.094)2.70 (.106) (base of lead) cathode (heat sink) 1.90 (.075)2.10 (.083) cathode anode 0.020 (.001)0.250 (.010) 1.20 (.047)1.40 (.055) 12.40 (.488)12.70 (.500) 13.30 (.524)13.60(.535) 1.00 (.039)1.15(.045) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 10.90 (.430) bsc 3.50 (.138) 3.81 (.150) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) dimensions in millimeters and (inches) cathode anode cathode e3 e1 sac: tin, silver, copper 100% sn microsemi's products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreig n patents pending. all rights reserved. downloaded from: http:///
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